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It has a break-down voltage and low drive current
6E resistors
The magnetic signal's near proximity to the Hall transducer improves device precision
These are Metal Film Resistor with a value of 680k ohm 1/4W and tolerance of ±1%
IRFB38N20 200V 43A N-Channel Power MOSFET Transistor Hall-Effect-Based Sensor IC 30A It has a break-down voltageAn N Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N Channel MOSFETs is approximately 2 to 3 times higher than in P channel MOSFETs for the same RDS(on) value, thus the P Channel chip must be 2 to 3 times the size of the N Channel chip. As a result, MOSFET transistor N Channels are frequently preferred for high