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The GFET-PV01 is produced for developing sensing applications with an epoxy encapsulation layer allowing consistent liquid handling and alignment during sensor modification and test
This produces a graphene channel completely free from polymers
The GFET-PV01 is designed with an in-plane platinum electrode to gate the transistor channel and the three graphene channels are equidistant from the central gate electrode
Designed for sensing and research applications
GFET-PV01 Quad Pack The GFET-PV01 is produced forThe Paragraf GFET PV01 is an electrolyte gated FET (field effect transistor) mass produced with a proprietary technique to deposit graphene directly on the device substrate. This produces a graphene channel completely free from polymers. The GFET PV01 is designed with an in plane platinum electrode to gate the transistor channel and the three graphene channels are equidistant from the central gate electrode. The design enables a completely homogeneous
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