Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KNR-062E:E | Dynamic random access memory | DEX Nordex Memory Bandwidth 41

Memory Bandwidth 41

centralized

Part #EP3C16E144C8N | FPGA | DEX features: ■ Lowest power consumption with TSMC low-power process technology and Altera® power-aware design flow ■ Low-power operation offers the following benefits: ■ Extended battery life for portable and handheld applications ■ Reduced or eliminated cooling system costs ■ Operation in thermally-challenged environments ■ Hot-socketing operation support

Voltage - Supply: 10V ~ 15V

Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G16KNR-062E:E | Dynamic random access memory | DEX Nordex Memory Bandwidth 41Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G16KNR 062E: E features: Uses two x8 8Gb Micron die to make one x16 Single rank TwinDie VDD = VDDQ = 1. 2V (1. 141. 26V) 1. 2V VDDQ terminated I O JEDEC standard ball out Low profile package TC of 0C to 95C 0C to 85C: 8192 refresh cycles in 64ms 85C to 95C: 8192 refresh cycles in 32ms MIL: MT40A1G16KNR 062E E MT40A1G16KNR 062E: E