Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G8SA-062E:E | Dynamic random access memory | DEX LED Driver This advanced MOSFET technology has

This advanced MOSFET technology has been especially tailored to reduce on-state resistance

MIL:MT53E256M32D2DS-053 AAT B

1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4

SC-88 30 V

Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A1G8SA-062E:E | Dynamic random access memory | DEX LED Driver This advanced MOSFET technology hasMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E: E features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register